Titanium dioxide-coated fluorine-doped tin oxide thin films for improving overall photoelectric property
- 1. Jiangsu Provincial Key Laboratory of Center for Photon Manufacturing Science and Technology, Jiangsu University, Zhenjiang 212013 (China)
- 2. School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013 (China)
- 3. School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China)
- 4. The State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China)
Description
Titanium (Ti) layers were deposited by direct current (DC) magnetron sputtering on commercial fluorine-doped tin oxide (FTO) glasses, followed by simultaneous oxidation and annealing treatment in a tubular furnace to prepare titanium dioxide (TiO2)/FTO bilayer films. Large and densely arranged grains were observed on all TiO2/FTO bilayer films. The presence of TiO2 tetragonal rutile phase in the TiO2/FTO bilayer films was confirmed by X-ray diffraction (XRD) analysis. The results of parameter optimization indicated that the TiO2/FTO bilayer film, which was formed by adopting a temperature of 400 °C and an oxygen flow rate of 15 sccm, had the optimal overall photoelectric property with a figure of merit of 2.30 × 10−2 Ω−1, higher than 1.78 × 10−2 Ω−1 for the FTO single-layer film. After coating a 500 nm-thick AZO layer by DC magnetron sputtering on this TiO2/FTO bilayer film, the figure of merit of the trilayer film achieved to a higher figure of merit of 3.12 × 10−2 Ω−1, indicating further improvement of the overall photoelectric property. This work may provide a scientific basis and reference for improving overall photoelectric property of transparent conducting oxide (TCO) films.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apsusc.2013.11.001Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2013.11.001;
- PII
- S0169-4332(13)02062-X;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 290
- Journal Page Range
- p. 80-85
- ISSN
- 0169-4332
- CODEN
- ASUSEE
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46005092
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANNEALING; DIRECT CURRENT; DOPED MATERIALS; FLOW RATE; FLUORINE ADDITIONS; LAYERS; MAGNETRONS; OPTIMIZATION; OXIDATION; PHOTOELECTRIC EFFECT; RUTILE; SPUTTERING; THIN FILMS; TIN OXIDES; TITANIUM; TITANIUM OXIDES; X-RAY DIFFRACTION
- Descriptors DEC
- CHALCOGENIDES; CHEMICAL REACTIONS; COHERENT SCATTERING; CURRENTS; DIFFRACTION; ELECTRIC CURRENTS; ELECTRON TUBES; ELECTRONIC EQUIPMENT; ELEMENTS; EQUIPMENT; FILMS; HEAT TREATMENTS; MATERIALS; METALS; MICROWAVE EQUIPMENT; MICROWAVE TUBES; MINERALS; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; RADIOACTIVE MATERIALS; RADIOACTIVE MINERALS; SCATTERING; TIN COMPOUNDS; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.