Interpretation and modeling of buried InAs quantum dots on GaAs and InP substrates

Comparisons of buried InAs/GaAs and InAs/InP quantum dots (QDs) utilizing transmission electron microscopy display interesting parallels and differences between the two systems. The higher 7.2% misfit in the InAs/GaAs system produces small (∼20 nm diameter) QDs with a majority displaying a predominately round shape. The lower 3.2% misfit in the InAs/InP system produces larger QDs (∼35 nm diameter) with the majority also displaying a predominately round shape. In both systems, the size of the QDs can be varied by changes in growth procedures and the largest QDs in any population show evidence of faceting copyright 2001 American Institute of Physics