Published December 1989 | Version v1
Journal article Metadata-only

Time-dependent degradiation of MOSFET channel mobility following pulsed irradiation

Creators

  • 1. Harry Diamond Labs., Adelphi, MD (USA)

Description

The authors present an apparatus capable of detecting micron sized particles traveling at speeds up to 106 cm/sec. The apparatus uses light scattering methods with automated data processing. Data generated by this apparatus should be extremely useful in radiation damage studies of components in contamination sensitive optical systems

Additional details

Publishing Information

Journal Title
IEEE Transactions on Nuclear Science
Journal Volume
36
Journal Issue
6
Series
IEEE Trans. Nucl. Sci.
Journal Page Range
1772-1783
ISSN
0018-9499
CODEN
IETNA

Conference

Title
26. annual conference on nuclear and space radiation effects.
Dates
25-29 Jul 1989.
Place
Marco Island, FL (USA).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
21059557
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S73: NUCLEAR PHYSICS AND RADIATION PHYSICS;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CARRIER DENSITY; HOLE MOBILITY; INTERFACES; MOSFET; PULSED IRRADIATION; RADIATION HARDENING; TIME DEPENDENCE
Descriptors DEC
FIELD EFFECT TRANSISTORS; HARDENING; IRRADIATION; MOBILITY; MOS TRANSISTORS; PHYSICAL RADIATION EFFECTS; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; TRANSISTORS

Optional Information

Secondary number(s)
CONF-890723--.