Evaluation of the In concentration of an InxGa1-xSb alloy layer in cross-sectional HRTEM images of III-V semiconductor superlattices

Atomic-scale positional resolved lattice spacing measurement is used to study the In concentration of the alloy layer in InAs/InxGa1-xSb superlattices by the molecular beam epitaxy techniques. The unstrained lattice distance d along three directions, [0 0 1], [1 1 0] and [1 1 1], was measured and the average lattice constant was calculated. The experimental lattice constants of InAs layers are almost equal to the theoretical ones. We have found that the average lattice constant of In0.25Ga0.75Sb alloy layers is in good agreement with previously reported Vegard's values, being slightly larger. The results indicate that the In concentration of x = 0.18 has a larger deviation compared with the designed values. (fast track communication)