Experimental results of aging and thermal effects in high-power laser diodes
- 1. Sandia National Labs., Albuquerque, NM (USA)
- 2. Scot Inc., Downers Grove, IL (USA)
Description
This paper describes the aging and thermal effects on high-power GaAlAs laser diodes constructed by Spectra Diode Laboratory (SDL) with multiple stripes, containing single-and multiple-quantum wells. Thermal effects are described for laser diodes constructed by McDonnell Douglas Astronautics Company/Optoelectronics Center (MDAC/OEC) with a single broad stripe containing a single-quantum well. The laser diodes are grown using metalorganic chemical vapor deposition (MOCVD). Experimental data are given showing the aging and thermal effects of these laser diodes while operating CW for different on-times and operating up to 2.0 W for an overdriven SDL commercial laser diode, 4.0 W for a SDL engineering prototype and 5.0 W for a MDAC/OEC prototype. Thermal effects are observed by operating at different intervals between shots and power levels when cooled by a fin heat-sink or thermoelectric cooler
Additional details
Publishing Information
- Publisher
- STS Press.
- Imprint Place
- McLean, VA (USA)
- Imprint Title
- Lasers '89
- Imprint Pagination
- 1159 p.
- Journal Page Range
- p. 882-891.
Conference
- Title
- 12th international conference on lasers and applications.
- Acronym
- Lasers '89
- Dates
- 3-8 Dec 1989.
- Place
- New Orleans, LA (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 22005359
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; S42: ENGINEERING; S74: ATOMIC AND MOLECULAR PHYSICS;
- Resource subtype / Literary indicator
- Conference, Numerical Data
- Descriptors DEI
- AGING; BEAM OPTICS; CHEMICAL VAPOR DEPOSITION; EXPERIMENTAL DATA; ORGANOMETALLIC COMPOUNDS; QUANTUM EFFICIENCY; SEMICONDUCTOR DIODES; SEMICONDUCTOR LASERS; TEMPERATURE DEPENDENCE
- Descriptors DEC
- AMPLIFIERS; CHEMICAL COATING; DATA; DEPOSITION; EFFICIENCY; EQUIPMENT; INFORMATION; LASERS; NUMERICAL DATA; ORGANIC COMPOUNDS; SEMICONDUCTOR DEVICES; SOLID STATE LASERS; SURFACE COATING
Optional Information
- Secondary number(s)
- CONF-891261--.