Published January 30, 2015 | Version v1
Journal article Metadata-only

Quality diagnostics of nanoscale AlAs/GaAs resonant tunnelling heterostructures based on IR-spectroscopic ellipsometry

Creators

  • 1. Bauman Moscow State Technical University, 105005, 2nd Baumanskaya str. 5, Moscow (Russian Federation)

Description

In this work, the procedure of assessing the quality of AlAs/GaAs resonant tunnelling heterostructures with relation to their resistance to diffusion destruction was developed. The diffusion blur of the AlAs/GaAs heterostructure layers was detected by means of infrared-spectroscopic ellipsometry. The diffusion coefficients of Al and Si in GaAs were also calculated

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/584/1/012014

Additional details

Identifiers

DOI
10.1088/1742-6596/584/1/012014;

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
584
Journal Issue
1
Journal Page Range
[6 p.]
ISSN
1742-6596

Conference

Title
International Scientific Seminars on Fundamental and Applied Problems of Photonics and Condensed Matter Physics
Dates
30 May - 27 Jun 2014
Place
Moscow (Russian Federation)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
47029108
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ALUMINIUM; ALUMINIUM ARSENIDES; DIFFUSION; ELLIPSOMETRY; GALLIUM ARSENIDES; HETEROJUNCTIONS; INFRARED SPECTRA; NANOSTRUCTURES; SILICON; TUNNEL EFFECT
Descriptors DEC
ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; ELEMENTS; GALLIUM COMPOUNDS; MEASURING METHODS; METALS; PNICTIDES; SEMICONDUCTOR JUNCTIONS; SEMIMETALS; SPECTRA