Evaluation of photovoltaic materials within the Cu-Sn-S family
Creators
- 1. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)
- 2. Physics Department, Colorado School of Mines, Golden, Colorado 80401 (United States)
Description
Next-generation thin film solar cell technologies require earth abundant photovoltaic absorber materials. Here we demonstrate an alternative approach to design of such materials, evaluating candidates grouped by constituent elements rather than underlying crystal structures. As an example, we evaluate thermodynamic stability, electrical transport, electronic structure, optical and defect properties of Cu-Sn-S candidates using complementary theory and experiment. We conclude that Cu2SnS3 avoids many issues associated with the properties of Cu4SnS4, Cu4Sn7S16, and other Cu-Sn-S materials. This example demonstrates how this element-specific approach quickly identifies potential problems with less promising candidates and helps focusing on the more promising solar cell absorbers
Additional details
Identifiers
- DOI
- 10.1063/1.4851896;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 103
- Journal Issue
- 25
- Journal Page Range
- p. 253902-253902.5
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45074912
- Subject category
- S14: SOLAR ENERGY;
- Descriptors DEI
- CRYSTAL STRUCTURE; DESIGN; ELECTRONIC STRUCTURE; MATERIALS; PHOTOVOLTAIC EFFECT; SOLAR CELLS; THIN FILMS
- Descriptors DEC
- DIRECT ENERGY CONVERTERS; EQUIPMENT; FILMS; PHOTOELECTRIC CELLS; PHOTOELECTRIC EFFECT; PHOTOVOLTAIC CELLS; SOLAR EQUIPMENT
Optional Information
- Notes
- (c) 2013 AIP Publishing LLC