Published June 1998 | Version v1
Journal article Metadata-only

SEB occurrence in a VIP: Influence of the epi-substrate junction

Creators

  • 1. Univ. Montpellier II (France)
  • 2. Aerospatiale, Les Mureaux (France)
  • 3. Centre National d'Etudes Spatiales, Toulouse (France)

Description

Heavy ion induced burnout is reported, for the first time, in different parts of a VIP. A 2D-simulation investigation allows a better understanding of this phenomenon and shows the importance of the epi-substrate junction parameters in the SEB occurrence

Additional details

Publishing Information

Journal Title
IEEE Transactions on Nuclear Science
Journal Volume
45
Journal Issue
3Pt3
Journal Page Range
p. 1624-1627
ISSN
0018-9499
CODEN
IETNAE

Conference

Title
radiations and their effects on devices and systems conference
Acronym
RADECS 97
Dates
15-19 Sep 1997
Place
Cannes (France)

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
29060948
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ELECTRONIC CIRCUITS; FAILURES; HEAVY IONS; PHYSICAL RADIATION EFFECTS; TWO-DIMENSIONAL CALCULATIONS
Descriptors DEC
CHARGED PARTICLES; IONS; RADIATION EFFECTS

Optional Information

Secondary number(s)
CONF-970934--