CERNDxCTA counting mode chip
Creators
- 1. CERN, CH-1211 Geneva 23 (Switzerland)
- 2. Interon AS, Asker, Norway and DX-ray Inc., Northridge, CA (United States)
Description
This ASIC is a counting mode front-end electronic optimized for the readout of CdZnTe/CdTe and silicon sensors, for possible use in applications where the flux of ionizing radiation is high. The chip is implemented in 0.25 μm CMOS technology. The circuit comprises 128 channels equipped with a transimpedance amplifier followed by a gain shaper stage with 21 ns peaking time, two discriminators and two 18-bit counters. The channel architecture is optimized for the detector characteristics in order to achieve the best energy resolution at counting rates of up to 5 M counts/second. The amplifier shows a linear sensitivity of 118 mV/fC and an equivalent noise charge of about 711 e-, for a detector capacitance of 5 pF. Complete evaluation of the circuit is presented using electronic pulses and pixel detectors
Availability note (English)
Available from http://dx.doi.org/10.1016/j.nima.2008.03.049Additional details
Identifiers
- DOI
- 10.1016/j.nima.2008.03.049;
- PII
- S0168-9002(08)00427-0;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
- Journal Volume
- 591
- Journal Issue
- 1
- Journal Page Range
- p. 167-170
- ISSN
- 0168-9002
- CODEN
- NIMAER
Conference
- Title
- 9. international workshop on radiation imaging detectors
- Dates
- 22-26 Jul 2007
- Place
- Erlangen (Germany)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40033967
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- AMPLIFIERS; CADMIUM TELLURIDES; CAPACITANCE; COUNTING RATES; CURIUM OXIDES; DISCRIMINATORS; ELECTRONS; ENERGY RESOLUTION; EVALUATION; IONIZING RADIATIONS; NOISE; READOUT SYSTEMS; SENSITIVITY; SENSORS; SILICON
- Descriptors DEC
- ACTINIDE COMPOUNDS; CADMIUM COMPOUNDS; CHALCOGENIDES; CURIUM COMPOUNDS; ELECTRICAL PROPERTIES; ELECTRONIC CIRCUITS; ELECTRONIC EQUIPMENT; ELEMENTARY PARTICLES; ELEMENTS; EQUIPMENT; FERMIONS; LEPTONS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RADIATIONS; RESOLUTION; SEMIMETALS; TELLURIDES; TELLURIUM COMPOUNDS; TRANSPLUTONIUM COMPOUNDS; TRANSURANIUM COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.