Published May 2015 | Version v1
Journal article

FDTD technique based crosstalk analysis of bundled SWCNT interconnects

  • 1. Department of Electronics and Instrumentation Engineering, Mahatma Jyotiba Phule Rohilkhand University, Bareilly-243006 (India)
  • 2. Department of Electronics and Communication Engineering, Indian Institute of Technology, Roorkee-247667 (India)
  • 3. Shobhit University, Modipuram, Meerut-250110 (India)

Description

The equivalent electrical circuit model of a bundled single-walled carbon nanotube based distributed RLC interconnects is employed for the crosstalk analysis. The accurate time domain analysis and crosstalk effect in the VLSI interconnect has emerged as an essential design criteria. This paper presents a brief description of the numerical method based finite difference time domain (FDTD) technique that is intended for estimation of voltages and currents on coupled transmission lines. For the FDTD implementation, the stability of the proposed model is strictly restricted by the Courant condition. This method is used for the estimation of crosstalk induced propagation delay and peak voltage in lossy RLC interconnects. Both functional and dynamic crosstalk effects are analyzed in the coupled transmission line. The effect of line resistance on crosstalk induced delay, and peak voltage under dynamic and functional crosstalk is also evaluated. The FDTD analysis and the SPICE simulations are carried out at 32 nm technology node for the global interconnects. It is observed that the analytical results obtained using the FDTD technique are in good agreement with the SPICE simulation results. The crosstalk induced delay, propagation delay, and peak voltage obtained using the FDTD technique shows average errors of 4.9%, 3.4% and 0.46%, respectively, in comparison to SPICE. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-4926/36/5/055002

Additional details

Publishing Information

Journal Title
Journal of Semiconductors
Journal Volume
36
Journal Issue
5
Journal Page Range
[9 p.]
ISSN
1674-4926

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
47077048
Subject category
S36: MATERIALS SCIENCE; S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
CARBON NANOTUBES; COMPARATIVE EVALUATIONS; DESIGN; ELECTRIC POTENTIAL; ERRORS; PEAKS; POWER TRANSMISSION LINES; SIMULATION; STABILITY
Descriptors DEC
CARBON; ELEMENTS; EVALUATION; NANOSTRUCTURES; NANOTUBES; NONMETALS