Influence of the voltage waveform during nanocomposite layer deposition by aerosol-assisted atmospheric pressure Townsend discharge
- 1. Département de Physique, Université de Montréal, Montréal, Québec H3C 3J7 (Canada)
- 2. LAPLACE, Université de Toulouse, CNRS, INPT, UPS, Toulouse (France)
- 3. Sorbonne Universités, UPMC Univ. Paris 06, CNRS, Collège de France, Laboratoire de Chimie de la Matière Condensée de Paris (CMCP), 4 place Jussieu, F-75005 Paris (France)
Description
This work examines the growth dynamics of TiO2-SiO2 nanocomposite coatings in plane-to-plane Dielectric Barrier Discharges (DBDs) at atmospheric pressure operated in a Townsend regime using nebulized TiO2 colloidal suspension in hexamethyldisiloxane as the growth precursors. For low-frequency (LF) sinusoidal voltages applied to the DBD cell, with voltage amplitudes lower than the one required for discharge breakdown, Scanning Electron Microscopy of silicon substrates placed on the bottom DBD electrode reveals significant deposition of TiO2 nanoparticles (NPs) close to the discharge entrance. On the other hand, at higher frequencies (HF), the number of TiO2 NPs deposited strongly decreases due to their "trapping" in the oscillating voltage and their transport along the gas flow lines. Based on these findings, a combined LF-HF voltage waveform is proposed and used to achieve significant and spatially uniform deposition of TiO2 NPs across the whole substrate surface. For higher voltage amplitudes, in the presence of hexamethyldisiloxane and nitrous oxide for plasma-enhanced chemical vapor deposition of inorganic layers, it is found that TiO2 NPs become fully embedded into a silica-like matrix. Similar Raman spectra are obtained for as-prepared TiO2 NPs and for nanocomposite TiO2-SiO2 coating, suggesting that plasma exposure does not significantly alter the crystalline structure of the TiO2 NPs injected into the discharge.
Additional details
Identifiers
- DOI
- 10.1063/1.4959994;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 120
- Journal Issue
- 5
- Journal Page Range
- vp.
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 48042363
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- AEROSOLS; ATMOSPHERIC PRESSURE; CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; GAS FLOW; LAYERS; NANOCOMPOSITES; NANOPARTICLES; NITROUS OXIDE; ORGANIC SILICON COMPOUNDS; PLASMA; RAMAN SPECTRA; SCANNING ELECTRON MICROSCOPY; SILICA; SILICON; SILICON OXIDES; TITANIUM OXIDES; TOWNSEND DISCHARGE; WAVE FORMS
- Descriptors DEC
- CHALCOGENIDES; CHEMICAL COATING; COLLOIDS; DEPOSITION; DISPERSIONS; ELECTRIC DISCHARGES; ELECTRON MICROSCOPY; ELEMENTS; FLUID FLOW; MATERIALS; MICROSCOPY; MINERALS; NANOMATERIALS; NITROGEN COMPOUNDS; NITROGEN OXIDES; ORGANIC COMPOUNDS; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; PARTICLES; SEMIMETALS; SILICON COMPOUNDS; SOLS; SPECTRA; SURFACE COATING; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- (c) 2016 Author(s)