Published October 1988
| Version v1
Journal article
Formation of metastable centers in irradiated silicon
Creators
- 1. State Scientific-Research and Design Institute of the Rare-Metal Industry, Moscow (USSR)
Description
Heat treatment (at temperatures 300-600 degree C) of silicon single crystals irradiated with neutrons and high energy gamma photons creates shallow acceptor centers. The authors investigated single crystals of n-type silicon gown by the molten zone method and characterized by an electrical resistivity of 500 Ω·cm in the initial state. These single crystals were radiated with 15-30 MeV gamma photons
Additional details
Publishing Information
- Journal Title
- Soviet Physics - Semiconductors (English Translation)
- Journal Volume
- 22
- Journal Issue
- 10
- Series
- Sov. Phys. - Semicond. (Engl. Transl.).
- Journal Page Range
- 1189-1190
- ISSN
- 0038-5700
- CODEN
- SPSEA
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 21070773
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Translation
- Descriptors DEI
- DATA PROCESSING; ELECTRICAL PROPERTIES; GAMMA RADIATION; HEAT TREATMENTS; MEASURING INSTRUMENTS; MEASURING METHODS; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SILICON; USSR
- Descriptors DEC
- DEVELOPED COUNTRIES; ELECTROMAGNETIC RADIATION; ELEMENTS; EUROPE; IONIZING RADIATIONS; MATERIALS; PHYSICAL PROPERTIES; RADIATION EFFECTS; RADIATIONS; SEMIMETALS
Optional Information
- Notes
- Cover-to-cover translation of Fizika i Tekhnika Poluprovodnikov (US SR).