Modeling of microwave discharges of H2 admixed with CH4 for diamond deposition
Creators
- 1. Laboratoire d'Ingenierie des Materiaux et des Hautes Pressions, Centre National de la Recherche Scientifique (CNRS) UPR 1311-Universite Paris 13-99, av. J.B. Clement, 93430 Villetaneuse (France)
- 2. INP-Greifswald, Friedrich-Ludwig-Jahn-Strasse 19, 17489 Greifswald (Germany)
- 3. Laser Components GmbH, 82140 Olching, Werner-von-Siemens-Strasse 15 (Germany)
Description
Microwave discharges of H2 admixed with CH4 in a moderate-pressure quartz bell jar reactor used for diamond deposition are studied numerically. Special attention was devoted to high-power densities which provide the most effective way for producing high-quality diamond films. First, a one-dimensional radial model describing the coupled phenomena of chemistry, energy transfer, as well as species and energy transport along the reactor's radial coordinate was developed. Species densities predicted with the model were compared with measurements with infrared tunable diode laser spectroscopy, resulting in validation of the model. Second, a one-dimensional axial model was used to describe the plasma flow along the reactor axis in a region between the reactor end wall and the substrate surface. This model was particularly useful for studying the plasma behavior in the vicinity of the substrate surface, where thermal and composition gradients are large. Both the radial and axial transport models are based on the same discharge model in which the plasma is described as a thermochemically nonequilibrium flow with different energy distributions for heavy species and electrons. The chemistry was described with a model containing 28 species and 131 reactions. The electron temperature, the gas temperature, and the species concentration were determined by solving a coupled set of equations. A wide range of experimental conditions used for diamond deposition was simulated, from low microwave power density (9 W cm-3, i.e., 600 W, 2500 Pa, and Tg∼2200 K) to high-power density (30 W cm-3, i.e., 2 kW, 12 000 Pa, and Tg∼3200 K). The main chemical paths were identified, and the major species, transport effects, and reaction pathways that govern diamond deposition plasmas are discussed
Additional details
Identifiers
- DOI
- 10.1063/1.2034646;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 98
- Journal Issue
- 5
- Journal Page Range
- p. 053303-053303.12
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37028135
- Subject category
- S70: PLASMA PHYSICS AND FUSION TECHNOLOGY;
- Descriptors DEI
- CHEMICAL VAPOR DEPOSITION; DIAMONDS; ELECTRON TEMPERATURE; ENERGY SPECTRA; ENERGY TRANSFER; HIGH-FREQUENCY DISCHARGES; HYDROGEN; LASER SPECTROSCOPY; METHANE; ONE-DIMENSIONAL CALCULATIONS; PLASMA; PLASMA DENSITY; POWER DENSITY; QUARTZ; SIMULATION; SUBSTRATES; THERMODYNAMICS; TRANSPORT THEORY; VALIDATION; WALL EFFECTS
- Descriptors DEC
- ALKANES; CARBON; CHEMICAL COATING; DEPOSITION; ELECTRIC DISCHARGES; ELEMENTS; HYDROCARBONS; MINERALS; NONMETALS; ORGANIC COMPOUNDS; OXIDE MINERALS; SPECTRA; SPECTROSCOPY; SURFACE COATING; TESTING
Optional Information
- Notes
- (c) 2005 American Institute of Physics