Published December 1986 | Version v1
Journal article Metadata-only

Verified technique for determination of sensitive region thickness of ionizing radiation silicon detectors

Creators

Description

Verified express technique for determining the thickness of sensitive region W of silicon semiconductor detectors is described. The technique consists in measuring the detector Cmin - capacitance under the maximum (operating) voltage Umax; C0.1 measuring at U=0.1Umax and in calculating W according to the formulas proposed

Additional details

Additional titles

Original title (Russian)
Уточненная методика определения толщины чувствительной области кремниевых детекторов ионизирующих излучений

Publishing Information

Journal Title
Izmer. Tekh.
Journal Issue
no.12
Series
Izmer. Tekh.
ISSN
0368-1025
CODEN
IZTEA

INIS

Country of Publication
Russian Federation
Country of Input or Organization
USSR
INIS RN
18090984
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
PERFORMANCE TESTING; SENSITIVITY; SI SEMICONDUCTOR DETECTORS
Descriptors DEC
MEASURING INSTRUMENTS; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS; TESTING

Optional Information

Notes
For English translation see the journal Measurement Techniques (USA).