Published 2018
| Version v1
Journal article
Determination of the barrier height of Pt - Ir Schottky nano-contacts on Al-doped ZnO thin films by conductive Atomic Force Microscopy
Creators
- 1. IPN, Escuela Superior de Ingenieria Mecanica y Electrica, Unidad Azcapotzalco, Seccion de Posgrado e Investigacion, Av. Granjas No. 682, Col. Santa Catarina, 02250 Ciudad de Mexico (Mexico)
- 2. IPN, Unidad Profesional Interdisciplinaria en Ingenieria y Tecnologias Avanzadas, Av. IPN No. 2580, Col. Barrio La Laguna Ticoman, 07340 Ciudad de Mexico (Mexico)
Description
By means of the I-V characteristics measured at room temperature, the height of the Schottky barrier established by the conductive Pt - Ir tip of an Atomic Force Microscope on the aluminum doped ZnO thin films were estimated in the range of 0.58 - 0.64 eV. The ideality factors were in the range of 2.11 - 1.39, respectively. These values are in accordance with those reported by other authors that measured the height of the Pt Schottky barrier on ZnO by means of several methods. The procedure detailed in this work suggests that the scanning time for obtaining I-V Schottky characteristics is of the order of 2 ms. (author)
Additional details
Publishing Information
- Journal Title
- Revista Mexicana de Fisica
- Journal Volume
- 64
- Journal Issue
- 6
- Journal Page Range
- p. 655-661
- ISSN
- 0035-001X
- CODEN
- RMXFAT
INIS
- Country of Publication
- Mexico
- Country of Input or Organization
- Mexico
- INIS RN
- 50049173
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM; ATOMIC FORCE MICROSCOPY; DATA; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; HEIGHT; LEAKAGE CURRENT; NANOSTRUCTURES; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; WAVELENGTHS; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; CURRENTS; DIMENSIONS; ELECTRIC CURRENTS; ELECTRICAL PROPERTIES; ELEMENTS; FILMS; INFORMATION; MATERIALS; METALS; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; TEMPERATURE RANGE; ZINC COMPOUNDS