Temperature, injection level, and frequency dependences of the luminescence in lightly- and heavily-doped CdTe:In

The temperature dependence, injection level dependence, and modulation frequency response of cathodoluminescence have been measured in Te-rich CdTe:In for materials with In concentrations ranging from 3x1015 to 1 x1018cm-3. The frequency and temperature dependences suggest that the luminescence involves an impurity level that has merged with a band edge at an In concentration of 1x1018/cm3. This behavior is interpreted as suggesting that the 1.4 eV luminescence in Te-rich CdTe:In results from a partially-forbidden transition between conduction band and a deeper acceptor level rather than from an intracenter type of transition. (Auth.)