Influence of carbon on secondary electron yield and fine structure of SI (III) single crystal

Secondary electron yield of a clean SI (III) surface was measured for primary energy (Esub(p)) in the range 2 eV to 1500 eV. The maximum yield was found to be 0.74 at Esub(p) max=325 eV. The build-up of carbon on the clean surface resulted in a gradual change of yield to a maximum value of 0.88. On the basis of experimental data, the escape depth of secondaries for clean Si was found to be 47 A0. The low energy region of the yield shows a peak at 12.0 eV, which is believed to be due to plasmon excitation threshold. (orig./A.B.)