Published July 15, 1991
| Version v1
Journal article
Initial stages of Ga and As growth on EuBa2Cu3O7-y(001)
Creators
- 1. NTT Applied Electronics Laboratories, Midori-cho Musashino-shi, Tokyo 180, Japan (Japan)
- 2. NTT Applied Electronics Laboratories, Tokai, Ibaraki 319-11, Japan (Japan)
Description
The first photoelectron spectroscopy results are presented for Ga and As growth on EuBa2Cu3O7-y(001) (EBCO) surfaces. Growth models are shown that explain these results. In Ga growth, the oxide state Ga initially covers the EBCO surface and then metallic state Ga grows on this surface as islands. On the other hand, As grows only one monolayer as the As oxide form without breaking CuO bonds at the As-EBCO interface, implying that it may be possible to grow GaAs films on EBCO with the As-oxide interlayer
Additional details
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 59
- Journal Issue
- 3
- Series
- Appl. Phys. Lett.
- Journal Page Range
- 363-365
- ISSN
- 0003-6951
- CODEN
- APPLA
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 22068635
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Descriptors DEI
- ADSORPTION; ARSENIC; COPPER OXIDES; CRYSTAL GROWTH; EUROPIUM OXIDES; FABRICATION; GALLIUM; GALLIUM ARSENIDES; HIGH-TC SUPERCONDUCTORS; JOSEPHSON JUNCTIONS; SUPERCONDUCTING JUNCTIONS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CHALCOGENIDES; COPPER COMPOUNDS; ELEMENTS; EUROPIUM COMPOUNDS; GALLIUM COMPOUNDS; METALS; OXIDES; OXYGEN COMPOUNDS; PNICTIDES; RARE EARTH COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SEMIMETALS; SUPERCONDUCTORS; TRANSITION ELEMENT COMPOUNDS