Published December 1, 2010 | Version v1
Journal article

Optical properties of silicon doped ZnO

  • 1. Multidisciplinary Nanotechnology Centre, Swansea University, Swansea SA2 8PP (United Kingdom)

Description

We have calculated the optical structure of wurtzite ZnO doped with Silicon (Si). The calculations are based on the density functional theory with the generalized gradient approximation (GGA) and the projector augmented wave pseudopotentials. The GGA with the Perdew Burke Ernzerhof exchange-correlation functional are employed in the simulations. Ultrasoft pseudopotentials are utilized for the geometry optimization to render the computations tractable as well as to enhance the efficiency. We investigate two kinds of defects in ZnO, namely the substitution of Zn by Si and O by Si. The optical properties, including dielectric function, reflectivity and absorption coefficient of wurtzite ZnO are calculated. The variation in the band gap and energetics have been validated against published results. The dielectric properties follow a steep decreasing trend for the low energy level. In addition, the reflectivity and absorption coefficients reduce abruptly due to the doping.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.physb.2010.08.072

Additional details

Identifiers

DOI
10.1016/j.physb.2010.08.072;
PII
S0921-4526(10)00851-3;

Publishing Information

Journal Title
Physica. B, Condensed Matter
Journal Volume
405
Journal Issue
23
Journal Page Range
p. 4763-4767
ISSN
0921-4526
CODEN
PHYBE3

Optional Information

Copyright
Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.