Investigation of the Electrical Characteristics of Al/p-Si/Al Schottky Diode

In this study, p-type Si semiconductor wafer with (100) orientation, 400 μm thickness and 1-10 Ω cm resistivity was used. The Si wafer before making contacts were chemically cleaned with the Si cleaning procedure which for remove organic contaminations were ultrasonically cleaned at acetone and methanol for 10 min respectively and then rinsed in deionized water of 18 MΩ and dried with high purity N₂. Then respectively RCA1(i.e., boiling in NH₃+H₂O₂+6H₂O for 10 min at 60°C ), RCA2 (i.e., boiling in HCl+H₂O₂+6H₂O for 10 min at 60°C ) cleaning procedures were applied and rinsed in deionized water followed by drying with a stream of N₂. After the cleaning process, the wafer is immediately inserted in to the coating unit. Ohmic contact was made by evaporating of Al on the non-polished side of the p-Si wafer pieces under ∼ 4,2 10^-6 Torr pressure. After process evaporation, p-Si with omic contac thermally annealed 580°C for 3 min in a quartz tube furnace in N₂. Then, the rectifier contact is made by evaporation Al metal diameter of about 1.0 mm on the polished surface of p-Si in turbo molecular pump at about ∼ 1 10^-6 Torr. Consequently, Al/p-Si/Al Schottky diode was obtained. The I–V measurements of this diode performed by the use of a KEITLEY 487 Picoammeter/Voltage Source and the C–V measurements were performed with HP 4192A (50–13 MHz) LF Impedance Analyzer at room temperature and in dark. (paper)