Published 1975
| Version v1
Book
A new technique for defect spectroscopy in semiconductors
Description
no abstract available
Additional details
Additional titles
- Subtitle (English)
- Application to 1 MeV electron-irradiated n-GaAs
Publishing Information
- Publisher
- Institute of Physics.
- Imprint Place
- London
- ISBN
- 0854981136
- Imprint Title
- Lattice defects in semiconductors, 1974. Invited and contributed papers from the international conference on lattice defects in semiconductors held in Freiburg, 22-25 July 1974
- Imprint Pagination
- p. 581-588.
- Journal Issue
- no. 23
- Series
- Institute of Physics Conference Series.
Conference
- Title
- International conference on lattice defects in semiconductors.
- Dates
- 22 Jul 1974.
- Place
- Freiburg, F.R. Germany.
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 6216207
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CRYSTAL DEFECTS; DIELECTRIC PROPERTIES; ELECTRON BEAMS; GALLIUM ARSENIDES; MEV RANGE 01-10; N-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR JUNCTIONS; SPECTRA; SPECTROSCOPY; TEMPERATURE DEPENDENCE; TRANSIENTS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; BEAMS; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; ENERGY RANGE; GALLIUM COMPOUNDS; LEPTON BEAMS; MEV RANGE; PARTICLE BEAMS; PHYSICAL PROPERTIES; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS