Published February 2010 | Version v1
Journal article Metadata-only

Efficiency of interaction of interstitial carbon with oxygen, tin, and substitution carbon in irradiated silicon

Creators

  • 1. Chernigiv State Pedagogical University, Chernigiv (Ukraine)
  • 2. Institute of Physics, Kyiv (Ukraine)

Description

It is shown that the probabilities of the interaction of interstitial carbon with interstitial oxygen and substitution carbon are close. It is found that interstitial carbon in tin-doped Si is less thermostable than that in Si, and the temperature of its complete annealing gradually decreases with increasing the tin concentration. It is shown that the probability of the interaction of interstitial carbon with tin exceeds the probability of its interaction with oxygen and on-site carbon by a factor of ∼ 2.3.

Additional details

Additional titles

Original title (Ukrainian)
Efektivnyist' vzajemodyiyi myizhvuzlovinnogo vugletsyu z kisnem, olovom yi vugletsem zamyishchennya v opromyinenomu kremnyiyi

Publishing Information

Journal Title
Ukrayins'kij Fyizichnij Zhurnal (Kyiv)
Journal Volume
55
Journal Issue
no.2
Journal Page Range
p. 223-228
ISSN
0372-400X

INIS

Country of Publication
Ukraine
Country of Input or Organization
Ukraine
INIS RN
41078006
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ANNEALING; CARBON; DOPED MATERIALS; EFFICIENCY; FOURIER ANALYSIS; IMPURITIES; INFRARED RADIATION; INTERACTIONS; INTERSTITIALS; IRRADIATION; OXYGEN; PHYSICAL RADIATION EFFECTS; SILICON; TIN
Descriptors DEC
CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; ELEMENTS; HEAT TREATMENTS; MATERIALS; METALS; NONMETALS; POINT DEFECTS; RADIATION EFFECTS; RADIATIONS; SEMIMETALS