Published September 1993
| Version v1
Journal article
Effect of electron beam on energy distribution of localized states in amorphous silicon nitride
- 1. Voronezhskij Gosudarstvennyj Univ., Voronezh (Russian Federation)
Description
Effect of electron beam on the transformation of localized state spectra in the mobility gap of silicon nitride films is investigated. The conclusion is made that the observed transformation of electron localized state spectra in a-SiNx under the effect of electron beam permits to propose a model for electron capture by the defects of the Si30 and Si-Si types in an amorphous film
Additional details
Additional titles
- Original title (Russian)
- О влиянии электронного пучка на энергетическое распределение локализованных состояний в аморфном нитриде кремния
Publishing Information
- Journal Title
- Fizika i Tekhnika Poluprovodnikov
- Journal Volume
- 27
- Journal Issue
- 9
- Journal Page Range
- p. 1577-1580.
- ISSN
- 0015-3222
- CODEN
- FTPPA4
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 25024626
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S30: DIRECT ENERGY CONVERSION;
- Descriptors DEI
- AMORPHOUS STATE; CRYSTAL DEFECTS; ELECTRON BEAMS; ELECTRON CAPTURE; EMISSION SPECTRA; ENERGY-LEVEL DENSITY; RADIATION DOSES; SILICON NITRIDES; THIN FILMS; X-RAY SPECTRA
- Descriptors DEC
- BEAMS; CAPTURE; CRYSTAL STRUCTURE; FILMS; LEPTON BEAMS; NITRIDES; NITROGEN COMPOUNDS; PARTICLE BEAMS; PNICTIDES; SILICON COMPOUNDS; SPECTRA