Published October 3, 2000 | Version v1
Report Restricted

The effects of radiation damage and impurities on void dynamics in silicon

Creators

Description

no abstract available

Availability note (English)

Available from INIS in electronic form; Also available from OSTI as DE00766481; PURL: https://www.osti.gov/servlets/purl/766481-9BHeIo/webviewable/

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Additional details

Identifiers

URL
https://www.osti.gov/servlets/purl/766481-9BHeIo/webviewable/;

Publishing Information

Imprint Pagination
24 p.
Report number
ANL/MSD/CP--103002

Conference

Title
12. International Conference on Ion Beam Modification of Materials
Dates
3-8 Sep 2000
Place
Canela - Rio Grande do Sul (Brazil)

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
32025792
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference, No Abstract
Descriptors DEI
HELIUM IONS; IMPURITIES; ION BEAMS; ION IMPLANTATION; PHYSICAL RADIATION EFFECTS; SILICON
Descriptors DEC
BEAMS; CHARGED PARTICLES; ELEMENTS; IONS; RADIATION EFFECTS; SEMIMETALS

Optional Information

Contract/Grant/Project number
W-31109-ENG-38
Funding organization
US Department of Energy (United States)