Published February 2008 | Version v1
Journal article

A new structure for RF-compensated Langmuir probes with external filters tunable in the absence of plasma

  • 1. Centre for Energy Studies, Indian Institute of Technology, New Delhi 110016 (India)
  • 2. Department of Physics, Indian Institute of Technology, New Delhi 110016 (India)

Description

A new Langmuir probe structure using externally placed filters that can be tuned in the absence of plasma is proposed. The probe design and tuning procedure take into account especially the change in the probe's environment when plasma is turned on, thereby ensuring that the filters do not become detuned in the presence of plasma. Measurement of the RF voltage amplitudes in RF plasma using a calibrated capacitive probe gave, respectively, ∼15.7 V, ∼4.1 V, ∼2.1 V and ∼0.5 V at the fundamental frequency (∼13.56 MHz), the second, third and the fourth harmonics; based on these values a three-stage filter was built at the fundamental and the second and third harmonics. A complete analysis of the probe including its stray capacitance, RF equivalent circuit, filter and plasma impedance has been carried out, from which the maximum RF sheath voltage drop could be estimated as ∼0.27 V, ∼0.34 V and ∼1.30 V at the fundamental, the second harmonic and the third harmonic, respectively; the drop for the latter is somewhat large because of unexpectedly high loss in the filter components at the higher frequencies. I-V characteristics presented show that the floating potential of the probe decreases by ∼60 V, as the probe is detuned progressively from its tuned condition; also, the electron temperature increases from ∼1.7 to 3.5 eV with progressive detuning. It is worth noting here that although the method of calibrating the capacitive probe in this work is accurate for moderately high plasma densities (RF skin depth in plasma (= δs) small in comparison with the plasma dimension, L) its accuracy for lower densities (δs ∼ L) is not too certain. Therefore, although the probe itself can be used at low plasma densities, verifying its efficacy for such cases could be difficult

Additional details

Identifiers

DOI
10.1088/0963-0252/17/1/015003;
PII
S0963-0252(08)50683-9;

Publishing Information

Journal Title
Plasma Sources Science and Technology
Journal Volume
17
Journal Issue
1
Journal Page Range
p. 015003
ISSN
0963-0252

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
39034817
Subject category
S70: PLASMA PHYSICS AND FUSION TECHNOLOGY;
Descriptors DEI
ACCURACY; AMPLITUDES; CAPACITANCE; DESIGN; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ELECTRON TEMPERATURE; EQUIVALENT CIRCUITS; FILTERS; HARMONICS; LANGMUIR PROBE; PLASMA; PLASMA DENSITY; VOLTAGE DROP
Descriptors DEC
ELECTRIC PROBES; ELECTRICAL PROPERTIES; ELECTRONIC CIRCUITS; OSCILLATIONS; PHYSICAL PROPERTIES; PROBES