Published July 22, 2016 | Version v1
Journal article Metadata-only

Memristive GaN ultrathin suspended membrane array

Creators

  • 1. National Research and Development Institute in Microtechnology, Str. Erou Iancu Nicolae 126A, Bucharest 077190 (Romania)
  • 2. Institute of Electronic Engineering and Nanotechnologies, Academy of Sciences of Moldova, Chisinau 2028 (Moldova, Republic of)
  • 3. Univ. Bucharest, Physics Faculty, PO Box MG-11, Bucharest 077125 (Romania)
  • 4. National Centers for Materials Study and Testing, Technical University of Moldova, Chisinau 2004 (Moldova, Republic of)

Description

We show that ultrathin GaN membranes, with a thickness of 15 nm and planar dimensions of 12 × 184 μ m2, act as memristive devices. The memristive behavior is due to the migration of the negatively-charged deep traps, which form in the volume of the membrane during the fabrication process, towards the unoccupied surface states of the suspended membranes. The time constant of the migration process is of the order of tens of seconds and varies with the current or voltage sweep. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/0957-4484/27/29/295204

Additional details

Identifiers

DOI
10.1088/0957-4484/27/29/295204;

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
27
Journal Issue
29
Journal Page Range
[5 p.]
ISSN
0957-4484

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
50037863
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
ELECTRIC POTENTIAL; GALLIUM NITRIDES; MEMBRANES; NANOSTRUCTURES; SURFACES; THICKNESS; TRAPS
Descriptors DEC
DIMENSIONS; GALLIUM COMPOUNDS; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES