Historical perspective and future trends for ion implantation systems

It is shown that many design principles for ion implanters for semiconductor doping have remained unchanged or reappeared under changing aspects throughout the equipment history from the earliest time up to the present. Some parameters, however, have developed in an exciting manner. An attempt is made to predict the future development of equipment and the probability of the appearance of alternative techniques. Prospects are given for possible equipment development for non-semiconductor materials. (orig.)