Published June 12, 2006 | Version v1
Journal article

Structural analysis of cubic boron nitride films by ultraviolet Raman spectroscopy

  • 1. Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Kowloon Tong, Hong Kong (China) and Surface Science Western, University of Western Ontario, London, N6A 5B7, Ontario Canada
  • 2. Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Kowloon Tong, Hong Kong (China)

Description

Cubic boron nitride (BN) films with improved crystallinity are deposited by physical vapor deposition at an extremely low substrate bias (-35 V). The films are characterized by UV Raman in association with Fourier transformed infrared (FTIR) spectroscopy. The influences of bias voltage and film thickness on the characterizations are investigated. UV Raman, in contrast to FTIR, is demonstrated to be a more powerful tool with high sensitivity for quantitative and/or qualitative evaluation of the phase purity and crystallinity, especially as the film thickness increases. Hexagonal BN inclusions (less than 1%), not evident in FTIR, are clearly revealed by UV Raman analysis

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
88
Journal Issue
24
Journal Page Range
p. 241922-241922.3
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
(c) 2006 American Institute of Physics