Homogeneous and inhomogeneous linewidths of excitons in partially ordered Ga0.52In0.48P
Creators
- 1. Department of Physics and Materials Sciences Center, Philipps-University of Marburg, 35032 Marburg (Germany)
- 2. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)
Description
We report picosecond four-wave mixing experiments on Ga0.52In0.48P grown by organometallic vapor phase epitaxy on GaAs substrates. The spectral behavior of the homogeneous linewidth in the range of the inhomogeneously broadened band gap excitonic resonance is found to be different for a more disordered as compared to a partially ordered structure. Whereas the former shows the normal alloy behavior, the behavior of the partially ordered sample supports the assumption that its structure consists of ordered domains with varying degrees of order. This means, in particular, that the main origin of the inhomogeneous broadening is different for the disordered and ordered case. In addition, a polarization dependence of the four-wave mixing signal is only observed for the more disordered sample
Additional details
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 65
- Journal Issue
- 18
- Journal Page Range
- p. 2347-2349.
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 26024117
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- DOMAIN STRUCTURE; EXCITONS; GALLIUM PHOSPHIDES; INDIUM PHOSPHIDES; LINE WIDTHS; MICROSTRUCTURE; OPTICAL PROPERTIES; PHYSICAL PROPERTIES; VAPOR PHASE EPITAXY
- Descriptors DEC
- CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; EPITAXY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; QUASI PARTICLES