Published January 11, 2024 | Version v1
Journal article

Transient absorption measurements of excitonic dynamics in 3RMoS2

  • 1. Department of Physics and Astronomy, The University of Kansas, Lawrence, Kansas 66045, United States of America

Description

The excitonic dynamics in MoS2 monolayer, bilayer, and bulk flakes with different stacking orders, namely 3R and 2H, are investigated through transient absorption spectroscopy at room temperature. Samples are obtained by the mechanical exfoliation of bulk MoS2 crystals with 3R and 2H stacking orders. Photoluminescence spectroscopy is performed to characterize and compare the samples. Time-resolved differential reflection measurements reveal that monolayer flakes exfoliated from the 3R and 2H crystals exhibit similar exciton lifetimes of a few picoseconds. However, the exciton lifetime in the 3R bilayer flake is approximately 85 ps, about twice as long as that in the 2H bilayer. This prolonged exciton lifetime is attributed to the reduction of the electron-hole wavefunction overlap in the 3R bilayer due to the built-in polarization. Similarly, in bulk 3R MoS2, the exciton lifetime is around 220 ps, approximately twice as long as those in bulk 2H MoS2. The extension of the exciton lifetime in 3R transition metal dichalcogenides could be advantageous for their applications in optoelectronic devices.

Additional details

Identifiers

DOI
10.1103/PhysRevB.109.035410;
Crossref Funder ID
10.13039/100000015; 10.13039/100006151; 10.13039/100013055;

Publishing Information

Journal Title
Physical Review B
Journal Volume
109
Journal Issue
3
Journal Page Range
9 pgs.
ISSN
1550-235X

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)

Optional Information

Copyright
©2024 American Physical Society
Contract/Grant/Project number
DE-SC0020995
Notes
Contact Email: huizhao@ku.edu; Record automatically processed
Funding organization
U.S. Department of Energy; Basic Energy Sciences; Division of Materials Sciences and Engineering