Published April 1, 2010
| Version v1
Journal article
Mott transition in electron-hole plasmas
- 1. Institut fuer Physik, Universitaet Rostock, 18051 Rostock (Germany)
Description
In connection with the ionization equilibrium of an electron-hole plasma in a highly excited semiconductor, the influence of many-particle effects on both the chemical potentials of carriers and the Mott transition of para-excitons in zinc selenide (ZnSe) is investigated over a wide range of temperatures and carrier densities. Special attention is directed to the determination of the region where an excitonic fraction can exist and, therefore, a possible Bose-Einstein condensate can occur at low temperatures.
Availability note (English)
Available from http://dx.doi.org/10.1088/1742-6596/220/1/012005Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. Conference Series (Online)
- Journal Volume
- 220
- Journal Issue
- 1
- Journal Page Range
- [10 p.]
- ISSN
- 1742-6596
Conference
- Title
- 4. interdisciplinary conference on progress in Nonequilibrium Green's functions
- Dates
- 17-21 Aug 2009
- Place
- Glasgow, Scotland (United Kingdom)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42051332
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BOSE-EINSTEIN CONDENSATION; CARRIER DENSITY; CARRIERS; EQUILIBRIUM; EXCITONS; IONIZATION; SEMICONDUCTOR MATERIALS; SOLID-STATE PLASMA; ZINC SELENIDES
- Descriptors DEC
- CHALCOGENIDES; MATERIALS; PLASMA; QUASI PARTICLES; SELENIDES; SELENIUM COMPOUNDS; ZINC COMPOUNDS