Published May 1, 2013
| Version v1
Journal article
A THz InGaAs/InP double heterojunction bipolar transistor with fmax = 325 GHz and BVCBO = 10.6 V
- 1. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016 (China)
Description
A common-base four finger InGaAs/InP double heterostructure bipolar transistor (DHBT) has been designed and fabricated using triple mesa structure and planarization technology. All processes are on 3-inch wafers. The area of each emitter finger is 1 × 15 μm2. The maximum oscillation frequency (fmax) is 325 GHz and the breakdown voltage BVCBO is 10.6 V, which are to our knowledge both the highest fmax and BVCBO ever reported for InGaAs/InP DHBTs in China. The high speed InGaAs/InP DHBT with a high breakdown voltage is promising for submillimeter-wave and THz electronics. (semiconductor devices)
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-4926/34/5/054006Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Semiconductors
- Journal Volume
- 34
- Journal Issue
- 5
- Journal Page Range
- [3 p.]
- ISSN
- 1674-4926
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44120520
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- BREAKDOWN; GALLIUM ARSENIDES; HETEROJUNCTIONS; INDIUM ARSENIDES; INDIUM PHOSPHIDES; OSCILLATIONS; TRANSISTORS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR JUNCTIONS