Published 1996 | Version v1
Miscellaneous Metadata-only

Structural perfection of Cz-Si crystals annealed above 1500 K under hydrostatic pressure

Creators

  • 1. AN Ukrainskoj SSR, Kiev (Ukraine). Inst. Poluprovodnikov
  • 2. Instytut Technologii Elektronowej, Warsaw (Poland)
  • 3. ESRF, Grenoble (France)
  • 4. Institute of Electron Materials Technology, Warsaw (Poland)

Description

Short communication

Part of:
Abstracts of 3. International School and Symposium on Synchrotron Radiation in Natural Science

Additional details

Additional titles

Augmented title (English)
synchrotron application

Publishing Information

Publisher
Polish Synchrotron Radiation Society.
Imprint Title
Abstracts of 3. International School and Symposium on Synchrotron Radiation in Natural Science
Imprint Pagination
104 p.
Journal Page Range
p. 77.

Conference

Title
3. International School and Symposium on Synchrotron Radiation in Natural Science.
Dates
31 May - 8 Jun 1996.
Place
Jaszowiec (Poland).

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
28067282
Subject category
S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference, No Abstract, Non-conventional Literature
Descriptors DEI
ANNEALING; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CZOCHRALSKI METHOD; MEETINGS; MONOCRYSTALS; SILICON; SYNCHROTRON RADIATION; X-RAY DIFFRACTION
Descriptors DEC
BREMSSTRAHLUNG; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; CRYSTALS; DIFFRACTION; ELECTROMAGNETIC RADIATION; ELEMENTS; HEAT TREATMENTS; RADIATIONS; SCATTERING; SEMIMETALS

Optional Information