Molecular beam epitaxy of InP using low energy P+ ion beam

A new film growth technique of III-V compound semiconductors is developed where the sticking coefficient of the group V element can be increased by implanting mass separated, high purity group V ion at low energy. Using this growth technique, the epitaxial growth of InP on (100)InP substrate is studied. Single crystal films are grown between 2100C and 4200C at the P+ ion energy of 200 eV and with the flux intensities of In molecular beam and P+ ion beam of 1.5x1013 cm-2.s-1 and 3.0x1013 cm-2.s-1, respectively. The films grown between 3000C and 4200C show sharp 2x4 structure in the RHEED pattern as in the case of MBE, and also show well defined features due to bound excitons and donor-acceptor pairs in the photoluminescence spectra at 4.2 K. (author)