Initial study on the structure and optical properties of Zn1-xFe xO films
- 1. Key Laboratory of Thin Films of Jiangsu, Suzhou university, Suzhou 215006 (China)
- 2. Department of Physics, Suzhou University, Suzhou 215006 (China)
- 3. Key Laboratory of Thin Films of Jiangsu, Suzhou university, Suzhou 215006 (China) and Analysis and Testing Center, Suzhou University, Suzhou 215006 (China)
- 4. Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031 (China)
Description
Zn1-xFe xO (x = 0, 0.052, 0.103, 0.157 and 0.212) films were prepared by the radio-frequency magnetron sputtering technique on Si (111) substrates and the microstructure of which was characterized by X-ray diffraction, X-ray photoelectron spectroscopy, and scanning electron microscopy. The samples had a preferential c-axis orientation and the position of (002) diffraction peak shifted to the lower degree side with increasing Fe component. In order to investigate the optical transmittance properties of Zn1-xFe xO films, we prepared the films on Al2O3 (001) substrates simultaneity and the UV-VIS optical transmittance spectra showed that the band gap energy of Zn1-xFe xO films decreased with increase of Fe concentration. Photoluminescence spectra of the samples were observed at room temperature
Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2007.01.015;
- PII
- S0040-6090(07)00034-X;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 515
- Journal Issue
- 13
- Journal Page Range
- p. 5462-5465
- ISSN
- 0040-6090
- CODEN
- THSFAP
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39018792
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM OXIDES; DOPED MATERIALS; FILMS; IRON OXIDES; MAGNETRONS; MICROSTRUCTURE; OPTICAL PROPERTIES; ORIENTATION; PHOTOLUMINESCENCE; RADIOWAVE RADIATION; SCANNING ELECTRON MICROSCOPY; SPECTRA; SPUTTERING; TEMPERATURE RANGE 0273-0400 K; TRANSMISSION; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDES
- Descriptors DEC
- ALUMINIUM COMPOUNDS; CHALCOGENIDES; COHERENT SCATTERING; DIFFRACTION; ELECTROMAGNETIC RADIATION; ELECTRON MICROSCOPY; ELECTRON SPECTROSCOPY; ELECTRON TUBES; ELECTRONIC EQUIPMENT; EMISSION; EQUIPMENT; IRON COMPOUNDS; LUMINESCENCE; MATERIALS; MICROSCOPY; MICROWAVE EQUIPMENT; MICROWAVE TUBES; OXIDES; OXYGEN COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; PHOTON EMISSION; PHYSICAL PROPERTIES; RADIATIONS; SCATTERING; SPECTROSCOPY; TEMPERATURE RANGE; TRANSITION ELEMENT COMPOUNDS; ZINC COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.