Published April 1996 | Version v1
Journal article

High-performance complementary metal-oxide-superconductor field effect transistor (CMOSuFET) current-mode operational amplifier

  • 1. Microelectronics Center, Shanghai Jiao Tong University, 1954 Hua Shan Road, Shanghai 200030 (China)

Description

A high-performance CMOSuFET current-mode operational amplifier is introduced using a MOSuFET, with P type NCCO (normal conducting copper oxide) as substrate, P type HTCOSu (high-temperature copper oxide superconductor) as drain and source electrodes and formed through the proximity effect. We study the operation and characteristics of the superconducting operational amplifier. It shows high current gain and wide band, is significantly less power hungry than a semiconductor CMOSFET operational amplifier and has the possibility of acting as a high-performance building block of the current-mode analogue VLSI (very-large-scale integrated) inside a discrete time or continuous time signal processing system. (author)

Availability note (English)

Available online at the Web site for the journal Superconductor Science and Technology (ISSN 1361-6668) http://www.iop.org/

Additional details

Identifiers

Publishing Information

Journal Title
Superconductor Science and Technology
Journal Volume
9
Journal Issue
4A
Journal Page Range
p. A66-A70
ISSN
0953-2048

Conference

Title
ISEC '95 (International Superconductive Electronics Conference)
Dates
18-21 Sep 1995
Place
Nagoya (Japan)

INIS