Published May 2012
| Version v1
Journal article
Phase transitions in thin Ge2Sb2Te5 chalcogenide films according to Raman spectroscopy data
Creators
- 1. Ryazan State Radio Engineering University (Russian Federation)
- 2. Russian Academy of Sciences, Kurnakov Institute of General and Inorganic Chemistry (Russian Federation)
- 3. Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)
Description
Data on the Raman spectra of thin Ge2Sb2Te5 chalcogenide semiconductor films are reported. The study is performed with the purpose of determining the temperatures of phase transitions initiated by laser radiation.
Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 46
- Journal Issue
- 5
- Journal Page Range
- p. 591-594
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43129371
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- FILMS; LASER RADIATION; PHASE TRANSFORMATIONS; RAMAN SPECTRA; RAMAN SPECTROSCOPY; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- ELECTROMAGNETIC RADIATION; LASER SPECTROSCOPY; MATERIALS; RADIATIONS; SPECTRA; SPECTROSCOPY
Optional Information
- Copyright
- Copyright (c) 2012 Pleiades Publishing, Ltd.