Interaction of muonium with oxygen on silica powder surfaces
Creators
- 1. TRIUMF and Dept. of Chemistry, Univ. of British Columbia, Vancouver, BC (Canada)
- 2. Dept. of Physics, Arizona State Univ., Tempe, AZ (USA)
- 3. TRIUMF and Dept. of Chemistry, Simon Fraser Univ., Burnaby, BC (Canada)
Description
Results of the first μSR studies using Merck FO Optipur silica powder, which contains paramagnetic impurities at the ppb level and has a surface area of 610±20 m2/g, are reported. Above 20 K, the transverse field muonium relaxation rate is roughly constant at 0.5 μs-1. Upon the addition of oxygen at ppm levels, the relaxation rate increases linearly with O2 concentration in the temperature range from 40-100 K yielding two-dimensional depolarization rate constants on the order of 10-4 cm-2 molecule-1 s-1. As the temperature is increased further, both oxygen and muonium desorb from the surface yielding a three-dimensional rate constant at 300 K of 3.1(3)x10-10-10 cm3 molecule-1 s-1, in agreement with the gas phase value. Longitudinal field measurements suggest that MuO2 is formed and is able to spin exchange with other oxygen molecules. (orig.)
Additional details
Publishing Information
- Journal Title
- Hyperfine Interactions
- Journal Volume
- 65
- Journal Issue
- 1-4,pt.3
- Series
- Hyperfine Interact.
- Journal Page Range
- 811-818
- ISSN
- 0304-3843
- CODEN
- HYIND
Conference
- Title
- 5. international conference on muon spin rotation, relaxation and resonance.
- Dates
- 9-12 Apr 1990.
- Place
- Oxford (UK).
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Switzerland
- INIS RN
- 22050321
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CHEMICAL REACTION KINETICS; DEPOLARIZATION; DESORPTION; IMPURITIES; LOW TEMPERATURE; MAGNETIC FIELDS; MEDIUM TEMPERATURE; MUON PROBES; MUONIUM; OXYGEN ADDITIONS; PARAMAGNETISM; POWDERS; RELAXATION TIME; SILICON OXIDES; SURFACE AREA; TEMPERATURE DEPENDENCE; THREE-DIMENSIONAL CALCULATIONS; ULTRALOW TEMPERATURE; VERY LOW TEMPERATURE
- Descriptors DEC
- CHALCOGENIDES; KINETICS; MAGNETISM; OXIDES; OXYGEN COMPOUNDS; PROBES; REACTION KINETICS; SILICON COMPOUNDS