Published February 2021 | Version v1
Journal article

Ion assisted near-complete filling of high aspect ratio trenches for 3-D neutron detectors

  • 1. Semiconductor Thin Films and Plasma Processing Laboratory, Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Powai, Mumbai – 400076 (India)
  • 2. Electronics Division, Bhabha Atomic Research Centre, Trombay, Mumbai – 400085 (India)

Description

Highlights: • Development of plasma enhanced chemical vapor deposition system. • Forward directed ions aid conformal filling of BxC into high aspect ratio trench. • 94.25% fill factor and 88.25% conformal coverage ratio at 3:7 ar/he flow ratio. • Promising for fabrication of high efficiency neutron detector. A single-step process has been developed for the conformal deposition of boron carbide in high aspect ratio trenches fabricated in an n-type (111) silicon substrate. Plasma enhanced chemical vapor deposition was used to deposit boron carbide from ortho-carborane (OC2B10H12) precursor mixed with helium and argon gas. The depositions were carried out under substrate self-bias conditions to achieve a high fill factor using forward-directed ions. Nearly complete filling of 25 µm deep trenches with high-aspect ratio (> 6:1) via conformal coating of side walls has been confirmed from cross-sectional scanning electron microscopy studies. The results presented in this article establish that the process technology developed for achieving conformal deposition of the neutron stopping layer is suitable for the fabrication of Silicon p-i-n based three-dimensional thermal neutron detectors with high neutron detection efficiency.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.tsf.2021.138521

Additional details

Identifiers

DOI
10.1016/j.tsf.2021.138521;
PII
S0040609021000043;

Publishing Information

Journal Title
Thin Solid Films (Print)
Journal Volume
720
Journal Page Range
vp.
ISSN
0040-6090
CODEN
THSFAP

Optional Information

Copyright
Copyright (c) 2021 Elsevier B.V. All rights reserved.