Enhancing photoluminescence of graphene quantum dots by thermal annealing of the graphite precursor
Creators
- 1. Vinča Institute of Nuclear Sciences, University of Belgrade, Mike Alasa 12-14, 11001 Belgrade (Serbia)
- 2. Polymer Institute Slovak Academy of Sciences, Dúbravská cesta 9, 845 41 Bratislava (Slovakia)
- 3. Department of Chemical and Pharmaceutical Sciences, INSTM, Center of Excellence for Nanostructured Materials (CENMAT), University of Trieste, via L. Giorgieri 1, 34127 Trieste (Italy)
- 4. Istituto per lo Studio dei Materiali Nanostrutturati (ISMN-CNR), via Ugo La Malfa 153, I-90146 Palermo (Italy)
- 5. School of Electrical Engineering, University of Belgrade, Bulevar kralja Aleksandra 73, 11120 Belgrade (Serbia)
Description
Highlights: • The enhancement of GQD photoluminescence by precursor modification is proposed. • GQD photoluminescence 4 times increased with doubled quantum yield. • Higher content of peroxyl, aldehyde and epoxy groups results in better capacitance. - Abstract: Different approaches for enhancement of the graphene quantum dots (GQDs) photoluminescence have been developed lately. We report modified electrochemical procedure for GQDs synthesis. Graphitic rods were thermal annealing at 1700 °C in vacuum and used for electrochemical quantum dots synthesis. We found that the modified GQDs (GQDs-1700) consist of two while in the structure of pristine (p-GQDs) three graphene layers are measured. The main structural difference between GQDs is the increased structural disorder, caused by a higher amount of the oxygen containing functional groups in the structure of GQDs-1700. The photoluminescence of GQDs-1700 is 4 times more intense, red shifted and with doubled Quantum Yield compared to p-GQDs. In addition, the changes in electrochemical behavior of GQDs are observed: the higher capacitance was noticed if GQDs posses more reducible functional groups, such as peroxyl, aldehyde and epoxy groups while increase in keto functional groups leads to the lower capacitance.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.materresbull.2017.04.052Additional details
Identifiers
- DOI
- 10.1016/j.materresbull.2017.04.052;
- PII
- S0025-5408(17)30463-4;
Publishing Information
- Journal Title
- Materials Research Bulletin
- Journal Volume
- 93
- Journal Page Range
- p. 183-193
- ISSN
- 0025-5408
- CODEN
- MRBUAC
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 49081327
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; ATOMIC FORCE MICROSCOPY; CAPACITANCE; ELECTROCHEMISTRY; GRAPHENE; GRAPHITE; PHOTOLUMINESCENCE; PRECURSOR; QUANTUM DOTS; RED SHIFT
- Descriptors DEC
- CARBON; CHEMISTRY; ELECTRICAL PROPERTIES; ELEMENTS; EMISSION; HEAT TREATMENTS; LUMINESCENCE; MICROSCOPY; MINERALS; NANOSTRUCTURES; NONMETALS; PHOTON EMISSION; PHYSICAL PROPERTIES
Optional Information
- Copyright
- Copyright (c) 2017 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.