Application of cascade-probabilistic method to simulation problems of radiation defects and Kumakhov radiation in solids
- 1. Almatinskij Gosudarstvennyj Univ., Almaty (Kazakhstan)
Description
On the base of analysis of literature data on passing of electrons and ions through substances the physical cascade-probabilistic model (CPM) of radiation defects generation in aluminium and silicon irradiated by electrons (1-10 MeV) and ions (1-1000 keV) is worked out. Approximation expressions for differential cross section of interactions are received. Software for approximation and calculation of CPM on IBM PC AT 486 computer on Fortran language is developed. Calculation of CPM for ftoroplast irradiated by electrons with energy 1-10 MeV is worked out as well. Evolutions of fracture properties are made. Anomalous absorption of energy was revealed in this polymer under room temperature. Resonance model of absorption is proposed. At that a system of equation consists of thermal conductivity equation and oscillation equation is worked out. As well as within frame of CPM the assessments of Kumakhov radiation flows appealing in silicon thin crystals during electron channeling with energy 1-10 MeV are carried out. It is shown, that within given energy range the yield of accompanying radiations increases within limits 10-3-10-2 quanta on one falling electrons
Additional details
Additional titles
- Original title (Russian)
- Применение KV-метода к задачам моделирования радиационных дефектов и кумаховского излучения в твердых телах
Publishing Information
- Publisher
- Almatinskij Gosudarstvennyj Univ.
- Imprint Place
- Almaty (Kazakhstan)
- ISBN
- 5-7667-5165-6
- Imprint Title
- Interaction of radiations with substance. Inter-college collection of scientific works
- Imprint Pagination
- 95 p.
- Journal Page Range
- p. 3-8
INIS
- Country of Publication
- Kazakhstan
- Country of Input or Organization
- Kazakhstan
- INIS RN
- 30036469
- Subject category
- S99: GENERAL AND MISCELLANEOUS; S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM; COMPUTERIZED SIMULATION; CRYSTAL DEFECTS; DIFFERENTIAL CROSS SECTIONS; ELECTRONS; FRACTURE PROPERTIES; IONS; IRRADIATION; PHOTONS; POLYMERS; SILICON
- Descriptors DEC
- BOSONS; CHARGED PARTICLES; CROSS SECTIONS; CRYSTAL STRUCTURE; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; LEPTONS; MASSLESS PARTICLES; MECHANICAL PROPERTIES; METALS; SEMIMETALS; SIMULATION
Optional Information
- Notes
- 3 refs. Imprint:Vzaimodejstvie izluchenij s veshchestvom. Mezhvuzovskij sbornik nauchnykh trudov