Published 1984
| Version v1
Miscellaneous
Memory function formalism applied to electronic transport in disordered systems
Description
Memory function formalism is briefly reviewed and applied to electronic transport using the projection operator technique. The resistivity of a disordered 2-D electron gas under strong magnetic field is obtained in terms of force-force correlation function. (Author)
Abstract (Portuguese)
O formalismo da funcao memoria e brevemente apresentado e aplicado no problema de transporte eletronico em sistemas desordenados usando-se a tecnica do operador de projecao. A resistividade de um gas desordenado de eletrons em duas dimensoes e obtida em termos da funcao de correlacao forca-forca. (M.W.O)Additional details
Additional titles
- Original title (no language)
- Anais do Simposio Latino-Americano de Fisica dos Sistemas Amorfos - v. 2.
Publishing Information
- Imprint Title
- Proceedings of the Latin American Symposium of Physics of Amorphous Systems - v. 2
- Imprint Pagination
- 265 p.
- Journal Page Range
- p. 279-288.
- Report number
- INIS-BR--903
Conference
- Title
- Latin American Symposium of Physics of Amorphous Systems.
- Dates
- 27 Feb - 2 Mar 1984.
- Place
- Niteroi, RJ (Brazil).
INIS
- Country of Publication
- Brazil
- Country of Input or Organization
- Brazil
- INIS RN
- 18096329
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- AMORPHOUS STATE; ELECTRON GAS; ELECTRON MOBILITY; TRANSPORT THEORY
- Descriptors DEC
- MOBILITY; PARTICLE MOBILITY
Optional Information
- Notes
- Imprint:Anais do Simposio Latino-Americano de Fisica dos Sistemas Amorfos - v. 2.