Published 1987 | Version v1
Book Metadata-only

Recent progress in surface-emitting lasers

Creators

  • 1. Tokyo Institute of Technology, 4259 Nagatsuta, Midoriku, Yokohama 227

Description

To reduce the threshold current of surface emitting (SE) lasers, it was tried to introduce some circular buried heterostructures (CBH). In this paper, the authors present some recent results on CBH GaInAsP/InP and GaAlAs/GaAs SE lasers

Additional details

Publishing Information

Publisher
Optical Society of America.
Imprint Place
Washington, DC (USA)
Imprint Title
Topical meeting on semiconductor lasers (Summaries)
Journal Page Range
p. 99-102.

Conference

Title
Southwest optics conference.
Dates
9-13 Feb 1987.
Place
Albuquerque, NM (USA).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
18089096
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ALUMINIUM ARSENIDES; BEAM EMITTANCE; CRYSTAL GROWTH; DIELECTRIC MATERIALS; ELECTRIC CURRENTS; EPITAXY; FABRICATION; GALLIUM ARSENIDES; GALLIUM PHOSPHIDES; HETEROJUNCTIONS; INDIUM ARSENIDES; INDIUM PHOSPHIDES; LASER MIRRORS; LIGHT SOURCES; RESEARCH PROGRAMS; RESONATORS; REVIEWS; SEMICONDUCTOR LASERS; SUBSTRATES
Descriptors DEC
ALUMINIUM COMPOUNDS; AMPLIFIERS; ARSENIC COMPOUNDS; ARSENIDES; CURRENTS; DOCUMENT TYPES; EQUIPMENT; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LASERS; MATERIALS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; RADIATION SOURCES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR JUNCTIONS; SOLID STATE LASERS