Modeling of total ionizing dose effect in submicron MOS transistor

As the gate oxide of deep submicron CMOS device is ultra thin, oxide traps and interface traps could be ignored under the stress of total ionizing dose. However, these two carries in shallow trench isolation (STI) region become more and more important in the leakage current of the device. In the paper, a potential component φ_rad is introduced to describe these two carries in surface potential function and along with the drain function to describe the degradation of CMOS device. (authors)