Published September 1997
| Version v1
Journal article
Indium diffusion study in α-titanium
Creators
- 1. Rio Grande do Sul Univ., Porto Alegre (Brazil). Inst. de Fisica
- 2. Departamento de Materiales, Comision Nacional de Energia Atomica, Av. del Libertador 8250, 1429 Buenos Aires (Argentina)
Description
The diffusion of implanted In in α-Ti has been studied in the 823-1073 K temperature range by using the Rutherford backscattering spectrometry (RBS) technique. The measurements show that the diffusion coefficients follow a linear Arrhenius plot: D(T)=(2.0±1.3) x 10-6 exp[-(260±40) kJ/mol/RT] m2s-1. The diffusion parameters D0 and Q are typical of a normal substitutional behavior. Comparison of the present and previous published results of impurity diffusion in α-Ti does not show evidence for mass or size effects in the diffusion mechanism. (orig.)
Additional details
Publishing Information
- Journal Title
- Journal of Nuclear Materials
- Journal Volume
- 249
- Journal Issue
- 1
- Journal Page Range
- p. 52-57.
- ISSN
- 0022-3115
- CODEN
- JNUMAM
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 28075647
- Subject category
- S22: GENERAL STUDIES OF NUCLEAR REACTORS;
- Descriptors DEI
- DIFFUSION; INDIUM ADDITIONS; ION IMPLANTATION; RUTHERFORD SCATTERING; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0400-1000 K; TEMPERATURE RANGE 1000-4000 K; TITANIUM-ALPHA
- Descriptors DEC
- ELASTIC SCATTERING; ELEMENTS; METALS; SCATTERING; TEMPERATURE RANGE; TITANIUM; TRANSITION ELEMENTS