Published December 5, 2008
| Version v1
Journal article
Diffusion modelling of low-energy ion-implanted BF2 in crystalline silicon: Study of fluorine vacancy effect on boron diffusion
Creators
- 1. Laboratoire Electronique Microtechnologie et Instrumentation (LEMI), University of Rouen, 76821 Mont Saint Aignan (France)
- 2. Laboratoire de Physique et Mecanique des Materiaux Metalliques, Departement d'O.M.P., Faculte des Sciences de l'Ingenieur, Universite de Setif, 19000 Setif (Algeria)
Description
We have investigated and modelled the diffusion of boron implanted into crystalline silicon in the form of boron difluoride BF2+. We have used published data for BF2+ implanted with an energy of 2.2 keV in crystalline silicon. Fluorine effects are considered by using vacancy-fluorine pairs which are responsible for the suppression of boron diffusion in crystalline silicon. Following Uematsu's works, the simulations satisfactory reproduce the SIMS experimental profiles in the 800-1000 deg. C temperature range. The boron diffusion model in silicon of Uematsu has been improved taking into account the last experimental data
Availability note (English)
Available from http://dx.doi.org/10.1016/j.mseb.2008.10.001Additional details
Identifiers
- DOI
- 10.1016/j.mseb.2008.10.001;
- PII
- S0921-5107(08)00415-7;
Publishing Information
- Journal Title
- Materials Science and Engineering. B, Solid-State Materials for Advanced Technology
- Journal Volume
- 154-155
- Journal Page Range
- p. 216-220
- ISSN
- 0921-5107
- CODEN
- MSBTEK
Conference
- Title
- Symposium I: Front-end junction and contact formation in future silicon/germanium based devices
- Acronym
- EMRS 2008 spring meeting
- Dates
- 26-30 May 2008
- Place
- Strasbourg (France)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40085794
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BORON; BORON FLUORIDES; DIFFUSION; FLUORINE; ION IMPLANTATION; ION MICROPROBE ANALYSIS; KEV RANGE 01-10; MASS SPECTROSCOPY; SILICON; SIMULATION; TEMPERATURE RANGE 1000-4000 K; VACANCIES
- Descriptors DEC
- BORON COMPOUNDS; CHEMICAL ANALYSIS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; ENERGY RANGE; FLUORIDES; FLUORINE COMPOUNDS; HALIDES; HALOGEN COMPOUNDS; HALOGENS; KEV RANGE; MICROANALYSIS; NONDESTRUCTIVE ANALYSIS; NONMETALS; POINT DEFECTS; SEMIMETALS; SPECTROSCOPY; TEMPERATURE RANGE
Optional Information
- Copyright
- Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.