Published March 1982
| Version v1
Journal article
Conductivity of amorphous silicon doped by the implantation of phosphorus
Creators
- 1. Physicotechnical Research Institute at the N. I. Lobachevski State University, Gorki
Description
Silicon was implanted with 40-keV phosphorus ions at 300 and 570 0K. It was found that the resulting increase in conductivity was greater at the high temperature
Additional details
Publishing Information
- Journal Title
- Sov. Phys. - Semicond. (Engl. Transl.)
- Journal Volume
- 16
- Journal Issue
- 3
- Series
- Sov. Phys. - Semicond. (Engl. Transl.).
- Journal Page Range
- 360-361
- ISSN
- 0038-5700
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 14761022
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- AMORPHOUS STATE; ELECTRIC CONDUCTIVITY; EXPERIMENTAL DATA; FERMI LEVEL; HIGH TEMPERATURE; ION IMPLANTATION; KEV RANGE 10-100; MEDIUM TEMPERATURE; PHOSPHORUS IONS; PHYSICAL RADIATION EFFECTS; SILICON
- Descriptors DEC
- ATOMIC IONS; CHARGED PARTICLES; DATA; ELECTRICAL PROPERTIES; ELEMENTS; ENERGY LEVELS; ENERGY RANGE; INFORMATION; IONS; KEV RANGE; NUMERICAL DATA; PHYSICAL PROPERTIES; RADIATION EFFECTS; SEMIMETALS
Optional Information
- Notes
- Cover-to-cover translation of Fizika i Tekhnika Poluprovodnikov (USSR).