Published 1994 | Version v1
Miscellaneous Metadata-only

Characterization of deep-level defects in MOCVD InxGa1-xAs layers

Creators

  • 1. AN Ukrainskoj SSR, Kiev (Ukraine). Inst. Poluprovodnikov
  • 2. Bell-Northern Research and Development Labs., Ottawa, ON (Canada)

Description

Short communication

Part of:
Abstracts of 8. Conference on Semi-Insulating 3-5 Materials

Additional details

Publishing Information

Imprint Place
Warsaw (Poland)
Imprint Title
Abstracts of 8. Conference on Semi-Insulating 3-5 Materials
Imprint Pagination
[100 p.].
Journal Page Range
p. P-18.

Conference

Title
8. Conference on Semi-Insulating 3-5 Materials.
Dates
6-10 Jun 1994.
Place
Warsaw (Poland).

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
28061041
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference, No Abstract, Non-conventional Literature
Descriptors DEI
ARSENIDES; CRYSTAL DEFECTS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; INDIUM PHOSPHIDES; MEETINGS; PHOTODIODES; SUBSTRATES
Descriptors DEC
ARSENIC COMPOUNDS; CRYSTAL STRUCTURE; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES

Optional Information