Some kinetic coefficients of all-round elastically deformed and heavily doped p-CdSnAs2

By using two p-CdSnAs2 monocrystal samples with 5.3x1018 and 1.73x1019 cm-3 impurity density, the temperature (4.2-400 K), field (up to 30 keV) and barometric (up to 15 kbar at 77 and 293 K) dependences of the electric conductivity, the Hall coefficient and the transverse magnetoresistance have been investigated. It has been ascertained that two types of holes, light and heavy, take part in transport phenomena in the region of impurity conductivity. The following characteristic and zonal parameters have been calculated: the relation of light and heavy holes mobilities equals 14; the effective mass of the state density of light holes is 0.027 m0, the energy gap between the subbands of the valence band is 0.049 eV (it decreases with pressure at a rate of 1.5x10-6 eV/bar)