Published August 1, 1979
| Version v1
Journal article
Small angle scattering of 350 keV protons in silicon at grazing incidence
- 1. Giessen Univ. (Germany, F.R.). Strahlenzentrum
Description
Backscattering spectra of 350 keV protons incident on a randomly oriented silicon crystal have been measured for angles of incidence ranging from 0.250 to 4.00 and for scattering angles up to 7.50. A simulation calculation based on multiple scattering inside the target has been performed. Good agreement with the experimental data is found. (Auth.)
Additional details
Publishing Information
- Journal Title
- Nucl. Instrum. Methods
- Journal Volume
- 164
- Journal Issue
- 1
- Series
- Nucl. Instrum. Methods.
- Journal Page Range
- 183-187
- ISSN
- 0029-554X
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 11500880
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANGULAR DISTRIBUTION; BACKSCATTERING; ENERGY SPECTRA; FLUX DENSITY; KEV RANGE 100-1000; MONOCRYSTALS; MULTIPLE SCATTERING; PROTON BEAMS; SILICON; SIMULATION; SMALL ANGLE SCATTERING; SURFACES
- Descriptors DEC
- BEAMS; CRYSTALS; DISTRIBUTION; ELEMENTS; ENERGY RANGE; KEV RANGE; NUCLEON BEAMS; PARTICLE BEAMS; SCATTERING; SEMIMETALS; SPECTRA